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FDC3616N
January 2004
FDC3616N
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
* 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V RDS(ON) = 80 m @ VGS = 6.0 V * High performance trench technology for extremely low RDS(ON) * Low gate charge (23nC typical) * High power and current handling capability * Fast switching speed.
Applications
* DC/DC converter * Load Switching
Bottom Drain
G S S S SuperSOT-6
TM
1
S
6 5 4
2 3
S FLMP
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
100 20
(Note 1a)
Units
V V A W C
3.7 20 2 1.1 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)
60 111 0.5
C/W
Package Marking and Ordering Information
Device Marking .616 Device FDC3616N Reel Size 7'' Tape width 8mm Quantity 3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)
FDC3616N
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Single Pulse,VDD = 50 V, ID= 3.7A
Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
WDSS IAR Drain-Source Avalanche Energy Drain-Source Avalanche Current 244 3.7 mJ A
Off Characteristics
BVDSS BVDSS TJ IDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V,
ID = 250 A
100 114 10 1 100 -100
V mV/C A A nA nA
ID = 250 A, Referenced to 25C VDS = 80 V, VDS = 30 V, VGS = 20 V, VGS = 0 V VGS = 0 V VDS = 0 V
VGS = -20 V, VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On Resistance Forward Transconductance
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 3.7 A VGS = 6.0 V, ID = 3.5 A VGS = 10 V, ID = 3.7 A, TJ = 125C VDS = 10 V, ID = 3.7 A
2
2.5 -7.4 55 58 104 19
4
V mV/C
70 80 139
m
gFS
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 50 V, f = 1.0 MHz
V GS = 0 V,
1215 72 39 1.1
pF pF pF
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6
9 4 28 10
18 8 45 20 32
ns ns ns ns nC nC nC
VDS = 50 V, VGS = 10 V
ID = 3.7 A,
23 4.8 5.4
FDC3616N Rev C1 (W)
FDC3616N
Electrical Characteristics
Symbol
trr Qrr IS VSD
Notes:
TA = 25C unless otherwise noted
Parameter
Diode Reverse Recovery Time
Test Conditions
Min Typ Max
41 107 2.1
Units
nS nC A V
Drain-Source Diode Characteristics and Maximum Ratings
IF = 3.7 A, diF/dt = 100 A/s Diode Reverse Recovery Charge Maximum Continuous Drain-Source Diode Forward Current VGS = 0 V, IS = 2.1 A
(Note 2)
Drain-Source Diode Forward Voltage
0.75
1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 60C/W when 2 mounted on a 1in pad of 2 oz copper b) 111C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDC3616N Rev C1 (W)
FDC3616N
Typical Characteristics
20
1.8 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 5.0V 4.0V
1.6 VGS = 4.0V 1.4 4.5V 5.0V 6.0V 10V
ID, DRAIN CURRENT (A)
15
10
1.2
5
1
3.5V
0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 ID, DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.16
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -50
RDS(ON), ON-RESISTANCE (OHM)
ID = 3.7 A VGS = 10V
ID =1.85 A
0.14
TA = 125 C
0.12 0.1 0.08
o
TA = 25 C
0.06 0.04 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
30
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 10V
25 ID, DRAIN CURRENT (A) 20 15
VGS = 0V
10 1 0.1
TA = 125oC 25oC -55oC
TA = 125oC
10
0.01 0.001 0.0001
25oC
5
-55oC
0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDC3616N Rev C1 (W)
FDC3616N
Typical Characteristics
10
VGS, GATE-SOURCE VOLTAGE (V)
1800 ID =3.7A VDS = 30V 70V 50V
CAPACITANCE (pF)
8
1500 CISS 1200 900 600 300 0 CRSS 0 25 50 75 COSS
f = 1MHz VGS = 0 V
6
4
2
0 0 5 10 15 20 25
Qg, GATE CHARGE (nC)
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RJA = 111oC/W TA = 25oC 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 1s 100s 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 111C/W TA = 25C
30
20
0.1
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
R JA (t) = r(t) * R JA R JA = 111 C/W
0.1
0.1 0.05 0.02
P(pk) t1 t2 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDC3616N Rev C1 (W)
FDC3616N
Dimensional Outline and Pad Layout
FDC3616N Rev C1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM
POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I7

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